Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage

نویسندگان

چکیده

In the design of ultralow leakage devices such as image sensors, it is necessary to understand influence low-density defects during plasma processing-plasma-induced physical damage (PPD)-on device performance. Defects created by exposure act carrier conduction sites and induce an increase in (e.g., dark) current. This study proposes a PPD evaluation scheme for defect assessments, specifically lateral direction due stochastic straggling (lateral PPD). Two test structures were designed: single with current (Ileak) complementary metal-oxide-semiconductor sensor (CIS) circuit dark (Idark). The energy level density distributed estimated using Shockley-Read-Hall (SRH) model. (Et) was derived SRH model from temperature dependence Ileak Idark defined activation Ea. trap (Nt) also determined. A comprehensive comparison these parameters conducted. Both are dependent on contact opening diameter after exposure, which implies presence via PPD. From analysis Idark, influenced mean value Moreover, we confirmed that indicates number sites, more specifically, at shallow levels. site CIS consistent device. proposed useful defects, critical future low-leakage devices.

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ژورنال

عنوان ژورنال: IEEE Journal of the Electron Devices Society

سال: 2022

ISSN: ['2168-6734']

DOI: https://doi.org/10.1109/jeds.2022.3176321